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Sunday, 26 October 2014

Differences between avalanche & zener breakdown

Zener breakdown: 
In Zener breakdown the electrostatic attraction between the negative electrons and a large positive voltage is so great that it pulls electrons out of their covalent bonds and away from their parent atoms.
ie: Electrons are transferred from the valence to the conduction band. In this situation the current can still be limited by the limited number of free electrons produced by the applied voltage so it is possible to cause Zener breakdown without damaging the semiconductor.
The important points are:
*Both sides of PN junction are heavily doped 
*Depletion layer is narrow A strong electric field is produced 
*Large number of holes and electrons are produced
*Zener current is independent of applied voltage 
Avalanche breakdown
Avalanche breakdown occurs when the applied voltage is so large that electrons that are pulled from their covalent bonds are accelerated to great velocities. These electrons collide with the silicon atoms and knock off more electrons. These electrons are then also accelerated and subsequently collide with other atoms. Each collision produces more electrons which leads to more collisions etc. The current in the semiconductor rapidly increases and the material can quickly be destroyed.
The important points are:
*Both sides of PN junction are lightly doped 
*Depletion layer is large 
*Electric field is not so strong   *Electron hole pairs are generated  Charge carriers acquire energy from the applied potential

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